BGA420 jan-29-2002 1 in sieget 25-technologie si-mmic-amplifie r cascadable 50 -gain block unconditionally stable gain | s 21 | 2 = 13 db at 1.8 ghz ip 3out = +13 dbm at 1.8 ghz ( v d = 3 v, i d = typ. 6.7 ma) noise figure nf = 2.3 db at 1.8 ghz reverse isolation > 28 db and return loss in / out > 12 db at 1.8 ghz vps05605 4 2 1 3 eha07385 d v 4 2 1 in out 3 gnd circuit diagram esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BGA420 bls 1, in 2, gnd 3, out 4, vd sot343 maximum ratings parameter symbol value unit device current i d 15 ma device voltage v d 6 v total power dissipation t s = 110 c p tot 90 mw rf input power p rfin 0 dbm junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance junction - soldering point 1) r thjs 410 k/w 1 for calculation of r thja please refer to application note thermal resistance
BGA420 jan-29-2002 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics v d = 3 v, z o = 50 device current i d 5.4 6.7 8 ma insertion power gain f = 0.1 ghz f = 1 ghz f = 1.8 ghz | s 21 | 2 17 15 11 19 17 13 - - - db reverse isolation f = 1.8 ghz s12 25 28 - noise figure f = 0.1 ghz f = 1 ghz f = 1.8 ghz nf - - - 1.9 2.2 2.3 2.3 2.6 2.7 intercept point at the output f = 1 ghz ip 3out 10 13 - dbm 1db compression point f = 1 ghz p -1db -6 -2.5 - return loss input f = 1.8 ghz rl in 8 11 - db return loss output f = 1.8 ghz rl out 12 16 - typical biasing configuration eha07386 100 pf rf in 100 pf gnd rf out 10 nf 100 pf + 3 12 4 d v bga 420 note: 1) large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path. 2) the use of plated through holes right at pin 2 is essential for pc-board-applications. thin boards are recommended to minimize the parasitic inductance to ground.
BGA420 jan-29-2002 3 typical s-parameters at t a = 25 c f s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang v d = 3 v, z o = 50 0.1 0.5 0.8 1 1.5 1.8 1.9 2 2.4 3 0.5686 0.5066 0.4404 0.3904 0.2841 0.2343 0.2136 0.2062 0.1688 0.1558 -8.5 -19.2 -28.7 -34.6 -50.5 -60.6 -64.1 -68.4 -89.7 -104.9 9.314 8.393 7.352 6.69 5.244 4.567 4.355 4.165 3.417 2.861 170.6 149.4 135.2 126.8 111.1 104 102 99.7 91.7 85.3 0.0268 0.0248 0.0236 0.024 0.0314 0.0378 0.0406 0.0426 0.0549 0.0682 12.7 11.7 25.6 35.9 57.2 63.5 66.1 67.2 71.4 73.1 0.2808 0.2613 0.2361 0.2144 0.1398 0.0979 0.0838 0.0689 0.0224 0.0284 -8.6 -3.8 -6.7 -9 -15 -18.2 -21.5 -22.2 -48 -147.5 spice-model bga 420 eha07387 3 r r 1 p1 c p2 c 1 c r 2 p3 cc p4 11 13 14 12 including parasitics out bga 420-chip in gnd + v t1 t1 t501 r 1 14.5k r 2 140 r 3 2.4k c 1 2.3pf c p1 0.2pf c p2 0.2pf c p3 0.6pf c p4 0.1pf
BGA420 jan-29-2002 4 transistor chip data t1 (berkley-spice 2g.6 syntax) : bf = 83.23 - ikf = 0.16493 a br = 10.526 - ikr = 0.25052 a rb = 15 re = 1.9289 vje = 0.70367 v xtf = 0.3641 - ptf = 0 deg mjc = 0.48652 - cjs = 0ff xtb = 0- fc = 0.99469 - nf = 1.0405 - ise = 15.761 fa nr = 0.96647 - isc = 0.037223 fa irb = 0.21215 a rc = 0.12691 mje = 0.37747 - vtf = 0.19762 v cjc = 96.941 ff xcjc = 0.08161 - vjs = 0.75 v eg = 1.11 ev tnom 300 k is = 0.21024 fa vaf = 39.251 v ne = 1.7763 - var = 34.368 v nc = 1.3152 - rbm = 1.3491 cje = 3.7265 ff tf = 4.5899 ps itf = 1.3364 ma vjc = 0.99532 v tr = 1.4935 ns mjs = 0- xti = 3 - c'-e'-diode data (berkley-spice 2g.6 syntax) : rs = 20 is = 2 fa n = 1.02 - all parameters are ready to use, no scaling is necessary package equivalent circuit: l bi = 0.36 nh l bo = 0.4 nh l ei = 0.3 nh l eo = 0.15 nh l ci = 0.36 nh l co = 0.4 nh c be = 95 ff c cb = 6ff c ce = 132 ff c 1 =28 ff c 2 =88 ff c 3 = 8 ff l 1 = 0.6 nh l 2 = 0.4 nh eha07388 l bi 1 c be c bo l out ei l l eo cb c ci l c 3 co l ce c chip c?-e?- in diode c 2 2 l l 1 gnd + v 12 13 14 11 bga 420 valid up to 3ghz extracted on behalf of infineon technologies ag by: institut fr mobil-und satellitentechnik (imst) for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com/silicondiscretes
BGA420 jan-29-2002 5 insertion power gain | s 21 | 2 = f ( f ) v d = 3 v t a = parameter 10 -1 10 0 10 1 ghz f 0 2 4 6 8 10 12 14 16 18 db 22 | s 21 | 2 ta=-20c ta=+25c ta=+75c insertion power gain | s 21 | 2 = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 5 10 15 db 25 | s 21 | 2 vd=5v, id=12.4ma vd=4v, id=9.4ma vd=3v, id=6.4ma vd=2v, id=3,4ma noise figure nf = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 1 2 3 db 5 nf vd=5v, id=12.4ma vd=3v, id=6.4ma noise figure nf = f ( f ) v d = 3v t a = parameter 10 -1 10 0 10 1 ghz f 0.0 0.5 1.0 1.5 2.0 2.5 db 3.5 nf ta=+75c ta=+25c ta=-20c
BGA420 jan-29-2002 6 intercept point at the output ip 3out = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 2 4 6 8 10 12 14 16 dbm 20 ip 3out vd=5v, id=12.4ma vd=4v, id=9.4ma vd=3v, id=6.4ma vd=2v, id=3.4ma intercept point at the output ip 3out = f ( f ), v d = 3v t a = parameter 10 -1 10 0 10 1 ghz f 0 1 2 3 4 5 6 7 8 9 10 dbm 12 ip 3out ta=-20c ta=+25c ta=75c
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